EHT Semi Mid-Frequency RF™ | Wafer Bias | 25 kV, 100 kW, 3 kA, 1 MHz

Bipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions

EHT Semi “Mid-Frequency RF™” Matchless RF Generator

• EHT Semi matchless RF Generators bring new advantages to the semiconductor industry
• Higher voltage compared with existing RF generators
• Higher power levels can translate to faster etching
• Eliminating the matching network is required, reducing complexity and size
• Voltage, power, and duty cycle are all tunable in real time
• Mid-Frequency Matchless RF Generator

Application

• Plasma generator (ICP and CCP) & wafer bias

Benefits

• Very low impedance drive direct couples to plasma
• Matching network not required – reduces complexity
• No reflected power
• Highly controllable and precise output. Both pulsed or continuous operation possible
• Arc and fault protection
• Fast feedback and control or preprogrammed control possible (< 10 μs)

Electrical spec

• Output voltage: > 25 kV
• Waveform type: bipolar RF
• Peak output current: 3 kA
• Frequency: 100 kHz - 1 MHz
• Peak power can be > 100 kW