EHT Semi Mid-Frequency RF™ | Wafer Bias, Plasma Generation | 10 kV, 20 kW, 15 MHz

Bipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions

EHT Semi "High-Frequency RF™" Matchless RF Generator

• EHT Semi matchless RF Generators bring new advantages to the semiconductor industry.
• Higher voltage compared with existing RF generators.
• Higher power levels can translate to faster etching.
• Eliminating the matching network is required, reducing complexity and size.
• Voltage, power, and duty cycle are all tunable in real time.
• High-Frequency Matchless RF Generator

The mid-frequency generator (< 1 MHz) can operate at very high peak power for rapid ionization or high voltage bias. The high-frequency generator operates at lower power levels but frequencies up to ~15 MHz. These matchless RF generators are still new, so they are at lower technology readiness level than RF generators from other vendors; however, they offer new capabilities.

Application: 

Plasma generator (ICP and CCP) & wafer bias

Benefits

• Very low impedance drive direct couples to plasma
• Matching network not required – reduces complexity
• No reflected power
• Highly controllable and precise output. Both pulsed or continuous operation possible
• Arc and fault protection
• Fast feedback and control or preprogrammed control possible (< 10 μs)

Electrical spec.:

• Output voltage: 0-10 kV
• Waveform type: bipolar RF
• Frequency: 15 MHz
• Peak power: 20 kW